Abstract
We have investigated the effect of isoelectronic In doping on deep levels in GaN films grown by metalorganic chemical vapor deposition via deep level transient spectroscopy. Deep level E2 0.5 eV below the conduction band was observed in both undoped GaN and In-doped GaN. However, with increasing In mole flow rate, the trap concentration of E2 decreases sharply from 2.3 × 10 14 to 2.27 × 10 13 cm -3 , nearly an order of magnitude in reduction, comparing to undoped GaN. This might be due to the dislocation pinning and/or bending effect. Therefore, In doping in GaN growth can effectively decrease the dislocation density and suppress the formation of deep levels E2.
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