Abstract

The effect of directed modification of nanostructures was studied using C2+ and O2+ ion beams. The use of ion beams with fluences of 1–5 · 1011 ion/cm2 leads to an improvement in structural properties, due to the reduction of distortions and stresses in the structure. It has been established that an increase in the irradiation fluence above 5 · 1011 ions cm−2, characteristic of the occurrence of overlapping regions of cascade defects, leads to a decrease in the degree of perfection due to the formation of impurity inclusions in the structure. The change in the conductive properties is due to a decrease in the concentration of regions of disorder and an increase in the degree of perfection of the crystal structure as a result of the radiation annealing of defects and stresses arising during the synthesis process. In this case, the formation of impurity inclusions in the structure (the oxide phase of Cu2O and the amorphous phase of Cu2C) leads to a decrease in the value of the specific conductivity and an increase in the resistance of nanotubes.

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