Abstract
The effect of ionizing radiation on the formation of charges at internal SiO2-Si (substrate) and external SiO2-Sips (gate) interfacial boundaries (IFB) and on the gate breakdown of MOSFETs is studied. It is shown that with an increase in the dose of ionizing radiation near the internal interfacial boundaries, a monotonous increase of positive charge in p-MOSFETs, and the accumulation of positive charges at first, and at doses above 105 rad the accumulation of negative charges in n-MOSFETs is observed. Near the external interfacial boundaries, at low radiation doses, positive charge accumulation is observed, and at doses >106 rad, negative charge in both p- and n-MOSFETs is observed. Up to a dose of 108 rad ionizing radiation dies not have a noticeable effect on the gate breakdown voltage in both p- and n-MOSFETs at both bias polarities. The absence of influence is explained by a breakdown by mechanism of anode hole injection. Keywords: ionizing radiation, MOSFETs, charge accumulation, gate breakdown.
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