Abstract

Femtosecond laser pulse propagation in a silicon target is simulated considering the ionization process under the intense electromagnetic field of the laser pulse. The electromagnetic field is computed by solving the Maxwell’s equations using the Finite-Difference Time-Domain (FDTD) method, and the two-temperature model is employed for electron-lattice energy coupling phenomena. The electrical conductivity is predicted by computing the electron/hole number density changes caused by the intense electromagnetic field. This study shows interesting results on the effects of the electrical conductivity change on the femtosecond laser pulse propagation in the silicon target.Femtosecond laser pulse propagation in a silicon target is simulated considering the ionization process under the intense electromagnetic field of the laser pulse. The electromagnetic field is computed by solving the Maxwell’s equations using the Finite-Difference Time-Domain (FDTD) method, and the two-temperature model is employed for electron-lattice energy coupling phenomena. The electrical conductivity is predicted by computing the electron/hole number density changes caused by the intense electromagnetic field. This study shows interesting results on the effects of the electrical conductivity change on the femtosecond laser pulse propagation in the silicon target.

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