Abstract
The results of a study of Zn condensation on Cu 2O and of Sb condensation on NaCl under ion irradiation are presented to demonstrate the possibility of controlling the formation process and structure of thin films by bombardment with an ion beam during vapour deposition. It is possible to stimulate nucleation of the condensing phase prior to the “critical” stage and thus to localize the deposit in the ion-irradiated region. Ion irradiation is also found to affect the kinetics of film growth, considerably accelerating the process and contributing to its equilibrium. Finally, ion beam irradiation is capable of transforming the crystallization mechanism by stimulating either coalescence or the epitaxial nucleation and mechanical joining of islands with no resulting change in form.
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