Abstract
The development of artificial intelligence systems is needed to solve many important challenges in neurobiology and neuroengineering for recreation of brain functions and efficient biorobotics. Here we propose a metal-oxide memristive device compatible with CMOS technology and suitable for hardware implementation of neuromorphic tasks. However, metal-oxide memristors have a significant drawback such as variation of resistive switching parameters due to the stochastic nature of filament formation in oxide material. In this work, we control the filament formation process by irradiation of oxide film surface with heavy ions. We have shown that the irradiation of oxide surface in the Au/SiO2/TiN memristive device with Xe+ ions (at energy of 5 keV) decreases the fluctuations of electroforming voltage, current-voltage characteristics during switching and increases the current ratio in the high/low resistance states. The ability to control internal parameters of the memristor can allow more efficiently using memristor as an element of neural networks and other neuromorphic circuits.
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