Abstract
Abstract Optical reflection spectra and their derivatives of Ar+ ion (75 keV) bombarded single crystals of Si and GaAs, with fluence ranging from 5 × 1011-1 × 1015 ions cm−2, have been investigated in the spectral region of interband optical transitions. The effect of ion-beam induced disorder on the interband transitions in the two categories of semiconductors (direct/indirect band gap) have been found to be quite different. This dissimilarity may be due to the different optical response of the intermediate microcrystalline component formed by ion-bombardment during the course of crystalline-to-amorphous transformation.
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