Abstract
High-quality In0.3Ga0.7As films have been epitaxially grown on Si (111) substrate by inserting an InxGa1−xAs interlayer with various In compositions by molecular beam epitaxy. The effect of InxGa1−xAs interlayer on the surface morphology and structural properties of In0.3Ga0.7As films is studied in detail. It reveals that In0.3Ga0.7As films grown at appropriate In composition in InxGa1−xAs interlayer exhibit smooth surface with a surface root-mean-square roughness of 1.7nm; while In0.3Ga0.7As films grown at different In composition of InxGa1−xAs interlayer show poorer properties. This work demonstrates a simple but effective method to grow high-quality In0.3Ga0.7As epilayers on Si substrates, and brings up a broad prospect for the application of InGaAs-based optoelectronic devices on Si substrates.
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