Effect of intrinsic layer structure parameters on PIN homogeneous junction InGaN solar cells

Abstract

This article examines the importance of indium gallium nitride (InGaN) homo junction solar cells in advancing high-efficiency or multi-junction solar batteries. The influence of indium composition and intrinsic layer with different thicknesses and carrier densities of PIN homo junction InGaN solar battery and its internal mechanism was studied. According to the research results, as the thickness gradually expands, the conversion efficiency of the battery increases first, and there is almost no change after the thickness reaches 0.3 μm; as the electron doping concentration of the intrinsic layer enhances, the conversion efficiency of the battery first rises to a certain extent and then begins to decline. Under the appropriate indium composition, the efficiency of the solar cell can be significantly increased to 24.6% by selecting the appropriate intrinsic layer thickness and doping concentration.