Abstract
A theoretical and experimental study is performed on free−charge−carrier Faraday effect in n−GaSb, on the basis of a two−band model. The expression of magnetoconductance derived earlier by Bordure and Savelli are generalized to high frequency and the theory of Faraday effect in n−GaSb is formulated. The theoretical study indicates that GaSb would produce Faraday rotation which depends very much on intervalley scattering. Rotation and ellipticity has been studied as a function of magnetic field and it has been found that the intervalley scattering has a predominant effect, as compared to intravalley scattering, on the transport mechanisms in GaSb. Also this effect increases with the decrease of temperature. Experimental measurement of microwave Faraday rotation has been made using the straight through transmission technique at 23.6 GHz, and at temperatures of 300 °K and 100 °K.
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