Abstract
The morphology and transition thickness (tc) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. The morphology varies with the composition of buffer layer and substrate orientation. Andtcdecreased when the thin InGaAs was used as a buffer layer instead of the GaAs layer on (311) B substrates. For InAs/(In)GaAs QDs grown on high miller index surfaces, both the morphology andtccan be influenced by the interfacial bonds configuration. This indicates that buffer layer design with appropriate interfacial bonds provides an approach to adjust the morphologies of QDs grown on high miller surfaces.
Highlights
The morphology and transition thickness for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated
The surface morphology of self-assembled QDs is a key factor in determining its optical properties, and it is very sensitive to the sample structure, for example, the composition of buffer layer [16], surface reconstruction, and substrate orientation [17]
For the InAs/InGaAs structures, while the QDs grown on GaAs (311) B substrates were mature, those grown on GaAs (100) substrates were clearly underdeveloped
Summary
The morphology and transition thickness (tc) for InAs quantum dots (QDs) grown on GaAs (311) B and (100) substrates were investigated. We have conducted a comparative study on the effect of buffer layer and the substrates’ orientation on the equilibrium structure and the critical transition thickness (tc) of InAs QDs grown on both GaAs (311) B and (100) substrates by molecular beam epitaxy (MBE).
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