Effect of Interface States on the Open-Circuit Volatage in a-Si:H/c-Si Heterojunction Solar Cells

Abstract

The properties of the a-Si:H/c-Si interface are one of the critical issues for the photovoltaic application. The effects of the interface states on the open-circuit voltage VOC were performed by a set of simulations. VOC decreases with Dit increasing, especially at high values of Dit, since the interface states act as recombination centers to decrease the excess minority carrier density in c-Si. Since the conduction band offset ∆EC can saturate part of interface states, VOC increasing with ∆EC increasing.