Abstract
Electrical properties have been examined for single Si/Si0.8Ge0.2 p-type modulation-doped heterostructures which have been grown by molecular beam epitaxy. It is shown that the two-dimensional hole gas in a normal modulation-doped heterostructure (doped layer on the surface side) has a higher mobility than in an inverted structure (doped layer on the substrate side). Secondary-ion mass spectrometry analysis indicates that the lower mobility in the inverted structure is due to surface segregation of boron. Hole mobilities as high as 6000 cm2/V s at 2 K and 3800 cm2/V s at 6 K have been obtained which are the highest values reported so far for Si/SiGe heterostructures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
