Abstract
"In the tandem solar cells based on CGS (ZnO/CdS/CuGaSe2) single solar cells, we have the interface state density of defects between CdS buffer layer and CuGaSe2 absorber layer witch causes undesirable carriers recombination, Gaussian distribution model describe this interfacial recombination witch depending to interface state density. In this work we simulated the effect of the interface state density in the buffer and absorber layer of ZnO/CdS/CuGaSe2 solar cells that is variated from 1014 to 1018 cm-3 on I-V characteristics and efficiency. We used the wxAMPS simulator to get the results."
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