Abstract
Effect of interface on magnetic properties of Co20Fe60B20 in ion-beam sputtered Si/MgO/CoFeB(top) and Si/CoFeB(bottom)/MgO bilayers is reported. The X-ray reflectivity and magneto-optical Kerr effect analysis revealed that, the interface between bottom MgO and top CoFeB is sensitive to the MgO growth process (post-oxidation, ion-assisted and reactive growth) and its process parameters (assist-ion energy). An increase in interface width from 0.17nm to 0.47nm correlates to increase in coercivity from 6Oe to 34Oe, decrease of in-plane uniaxial magnetic anisotropy (UMA) from 8×103 to 5×103J/m3 and changes in magnetization reversal. In contrast, the CoFeB(bottom)/MgO interface shows different magnetic behavior and no UMA.
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