Abstract
We formulate adiabatic charge pumping via a single-level quantum dot (QD) induced by reser- voir parameter driving, i.e., temperature and electrochemical potential driving. Our formulation describes arbitrary strength of dot-reservoir coupling and Coulomb interaction in the QD, and is applicable to the low-temperature regime, where the Kondo effect becomes important. The adia- batic charge pumping is expressed by the Berry connection and is related to delayed response of the QD. We calculate the pumped charge by the renormalized perturbation theory, and discuss how the Coulomb interaction affects the charge pumping.
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