Abstract
This study reports the effect of poly(tetrafluoroethylene) (Teflon) as a surface modification layer, which was deposited on the surface of gate insulator and source/drain (S/D) electrodes, on bottom-contact pentacene-based organic thin-film transistors (OTFTs). The inserted 1.5-nm-thick Teflon layer can enhance the device performance because of the improved molecular orientation in pentacene film and reduced contact resistance (RC) between the pentacene film and the S/D electrodes. The improved molecular orientation of pentacene film is caused by the hydrophobic and smooth Teflon layer surface. The reduced RC is a result of the tunneling process at the Au/pentacene interface. This study also found that the device performance decreased as the Teflon layer increased in thickness. This is because of the increased RC and decreased carrier injection efficiency between the pentacene film and the S/D electrodes. Compared to devices without a Teflon layer, the drain current and field-effect mobility of devices with a 1.5-nm-thick Teflon layer increased by 93 and 105%, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.