Abstract
Abstract The modifications in structural and optical properties of metal organic vapour phase epitaxy (MOVPE) grown stacked layers of InSb/GaSb nanostructures which were investigated as a function of the InSb quantum dot (QD) layer deposition time using scanning probe microscopy (SPM), transmission electron microscopy (TEM), photoluminescence (PL) and Raman spectroscopy have been reported in this work. At 10 K, a red-shift from 0.76 eV to 0.73 eV in photoluminescence (PL) emission wavelength of the nanostructures was observed with increasing deposition time of the buried InSb QD layers which were transformed into quantum wells (QWs) after capping. Room temperature Raman scattering spectra from the samples indicates a slight blue shift and decrease in the intensity of the InSb-like longitudinal optical phonon (LO) mode as the InSb dot layer deposition time decreases from 5 s to 3 s. The presence of structural defects in the stacked layers of the nanostructures is suggested to act as channels and charge traps of non-radiative recombination for the carriers in some of the layers which accounts for the low intensity of the PL emission observed from the stacked layers.
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