Effect of input power on crystal orientation and residual stress in AlN film deposited by dc sputtering

Abstract

The crystal orientation and residual stress development in AlN films deposited by dc planar magnetron sputtering on a glass substrate were investigated by atomic force microscopy (AFM) and X-ray diffraction. The microscopic surface morphology, the film thickness and the crystal orientation were investigated for films that were deposited at a constant N 2 gas pressure and a constant heating temperature of the substrate at various input powers. The following results were obtained: (1) the crystal grain size and the film thickness increased with increasing input power; (2) c-axis orientation was slightly good at high input power; (3) tensile residual stresses were obtained at low input power and large compressive stresses were obtained at high input powers of P=154 and 180 W.