Abstract
The reaction yields of synchrotron-radiation excited high-vacuum chemical vapor deposition at the core-excitation and valence-excitation regions of disilane are obtained by measuring both the incident photon numbers of the synchrotron-radiation beams which pass through C and Al filters and the rates of Si deposition induced by these synchroton-radiation beams. It is confirmed that the reaction yield for the core-excitation energy region is about three times larger than the value for the valence-excitation region. It is also demonstrated that synchrotron-radiation excited high-vacuum chemical vapor deposition proceeds by the pure-photochemical reaction, not by the reaction induced by secondary electrons due to synchrotron-radiation irradiation on the substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
