Abstract
A systematic study to understand the relationship between wavelength uniformity and substrate curvature during InGaN growth is described in relation to the initial bow of sapphire substrate. The initial bow of the substrate acted as the offset parameter for its curvature throughout the stages of the epitaxy process. Substrate flatness during InGaN growth was found to be important for achieving high wavelength homogeneity. The impact of n-GaN layer thickness and InGaN growth temperature on the substrate curvature shape was investigated to obtain a perfectly flat substrate shape at the InGaN growth stage. Temperature adjustment showed a strong impact on substrate curvature at the InGaN growth stage. The best initial bow was found as a function of InGaN growth temperature, and the importance of the initial bow of the sapphire substrate for obtaining high homogeneity in light emitting diode (LED) wavelength was experimentally verified.
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