Abstract
The experimental dependences for a laser based on submonolayer quantum dots (QDs) without an absorber were used to calculate the energy characteristics of a semiconductor laser based on QDs and quantum wells with a saturable absorber under bistable lasing conditions; the data obtained make it possible to implement a monolithic version of this laser. All of the mechanisms of carrier relaxation and QD filling, which are important for experiment, are taken into account. The effect of inhomogeneous QD broadening over resonant frequency is considered. The laser mode shift that is caused by an increase in the pump current is found to limit the lasing power. It is shown that the choice of active and passive layers with inhomogeneously broadened QDs makes it possible to obtain bistable lasing in the entire range of available pump currents.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
