Abstract
This paper is to apply an electrochemical mechanical planarization (ECMP) system to analyze the dynamic effects of inhibiter concentration on general Cu-CMP slurry. Experimental results show that the MRR increases when the BTA concentration decreases. Different BTA concentration after slurry analysis process will also affect copper surface condition. The passivation layer has been observed by scanning electron microscopy, potentiodynamic polarization curve and potentialstatic polarization curve during slurry analysis process. Results can be further applied for Cu-CMP slurry analysis with its dynamic effects of inhibiter concentration to achieve higher efficiency of removal rate as well as the non-uniformity, especially for the TSV Cu-CMP required in the 3D IC fabrication process.
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