Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED

Shanise Rashid,N.Syafira Abdul Halim,Mukhzeer M Shahimin,M.Halim A Wahid,N Azura M Ahmad Hambali,Mohamad Halim Abd Wahid

doi:10.1051/epjconf/201716201038

Shanise Rashid, N.Syafira Abdul Halim + Show 4 more

Open Access

https://doi.org/10.1051/epjconf/201716201038

Copy DOI

Abstract

This work is dedicated to the study of InGaN based LED on the thickness variation effect. The operating voltage, total emission rate, efficiency droop and spontaneous recombination rate was improved by increasing the thickness of InGaN layer of InGaN/AlGaN electron blocking layer (EBL). Based on optical and electrical results, the thicker InGaN layer could have lower operating voltage and higher total emission rate. LED with 5nm thick InGaN layer also could prevent electron leakage into p-region and improve hole injection efficiency. As a result it decreases 60% of efficiency droops and reduces the trap assisted recombination in InGaN/AlGaN active light emitting region. This indicates that InGaN layer may decrease the non-radiative recombination

Highlights

Nitrides semiconductors, especially the gallium nitride (GaN) based light emitting diode (LED) with an InGaN/AlGaN double heterostructure, are among the most promising optoelectronic devices to be developed in recent years [1,2,3]
The InGaN thickness in InGaN/AlGaN electron blocking layer (EBL) for 2nm is set as reference LED and others are variably set at 3,4 and 5 nm and labelled as LED I, LED II and LED III respectively
Characteristics of InGaN/AlGaN LED with undoped InGaN EBL have been investigated with different thicknesses of InGaN that sandwiched between AlGaN

Summary

Introduction

Especially the gallium nitride (GaN) based light emitting diode (LED) with an InGaN/AlGaN double heterostructure, are among the most promising optoelectronic devices to be developed in recent years [1,2,3]. The carrier injection efficiency has the key functions in the light emission efficiency of GaN based LEDs. Meeyard et al [8, 9] reported asymmetry during carrier transport because of the much lower concentration and mobility of holes in p-GaN and p-AlGaN compared with electrons. The asymmetry in carrier transport reduces the light emission efficiency of LEDs and enlarges the efficiency droop

Methods

Results

Conclusion