Abstract
In this paper, the physical mechanism and trap effect of AlGaN/GaN high electron mobility transistor HEMT with inductively couple plasma (ICP) based oxygen plasma treatment are investigated. Three devices with different oxygen plasma treatment conditions are fabricated and compared to a conventional device. To understand the physical mechanism of oxygen plasma treatment by ICP, the chemical composition change of the barrier layer is studied through X‐ray photoelectron spectroscopy (XPS) and transmission electron microscope (TEM), and the Al molar composition changes of the barrier layer after oxygen plasma treatment are numerically calculated. By numerical calculation of the polarization effect, it is found that an increase in time and RF power of the ICP increase the oxidation effect while the etching effect is decreased. Meanwhile, the trap effect of the devices that has treated with oxygen plasma treatment is also studied. In this study, the authors found that the greater the RF power is, the great the number of deep‐level trap states introduced by oxygen plasma treatment. However, the effect of oxygen plasma treatment on trap states is relatively limited, indicating that the trap density introduced by the ICP‐based oxygen plasma treatment is low.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
