Abstract
Quantized levels of InAs/GaAs thin layer structures are calculated using a modified finite square well model, which takes into account In-Ga replacement during growth. Comparison between the calculated results and experimental band gaps indicates that In-Ga replacement rarely occurs in flow-rate modulation epitaxy and that, in contrast, about 90% of the surface In is replaced by Ga in molecular beam epitaxy. The effect of the replacement on the modulation of GaAs/AlGaAs quantized levels by InAs layer insertion is also demonstrated.
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