Abstract
The effect of indium on photoluminescence properties of InGaPN layers was investigated and compared with that of GaPN layers. Two phenomena involving photoluminescence properties were observed in the InGaPN layers: (i) an S-shape of photoluminescence (PL) peak energy as a function of temperature, caused by spatial fluctuation of bandgap energy related to In and N content; and (ii) red shifts of the PL peak energy at 18 K in the InGaPN layers after rapid thermal annealing (RTA), caused by the increase of N- and In-rich region with increasing RTA temperature. It was also found that integrated PL intensity in the InGaPN layers was higher than that in the GaPN layers, and that PL quenching became more insensitive to the change in temperature resulting from the decrease in nonradiative centers with increasing RTA temperature.
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