Abstract
Polycrystalline In:ZnSe films were prepared by the thermal co-evaporation method, where high purity ZnSe and In2Se3 powders are taken as source materials. Orderly change in the X-ray diffraction peak position and red shift in the optical absorption edge have confirmed the incorporation of the dopant in the system. Photoluminescence spectra showed that the doped system has a Zn vacancy, which is in line with energy dispersive spectroscopy measurements. The chemical state of the doped films i.e., Zn2+, In3+ and Se2− was analysed by Raman and X-ray photoelectron spectroscopy (XPS); XPS has also indicated the incorporation of oxygen in small fractions which improves the conductivity of the films. The electrical investigation has revealed that electrical properties altered by doping and majority charge carriers are electrons and carrier density is in the order of 1015 cm−3. Films with 15 at. % In exhibited good photoresponse in the visible range and suitable for photodetector applications.
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