Abstract
In-doped ZnO nanostructures with different indium concentrations were grown using a thermal evaporation method. The In-doped ZnO nanostructures with a low concentration of indium exhibited a javelin shape, while the In-doped ZnO nanostructures with a high concentration of indium showed a flake shape. In addition, undoped ZnO nanojavelins were grown under the same conditions, but the sizes of these undoped ZnO nanojavelins were larger than the In-doped ZnO nanojavelins. It was shown that the In3+ cations played a crucial role in controlling the size. X-ray diffraction and Raman spectroscopy clearly showed hexagonal structures for all of the products. However, the Raman results demonstrated that the In-doped ZnO nanoflakes had a lower crystalline quality than the In-doped ZnO nanojavelins. Furthermore, photoluminescence (PL) measurements confirmed the Raman results. Moreover, the PL results demonstrated a larger band-gap for the In-doped ZnO nanostructures in comparison to the undoped ZnO.
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