Abstract
In this study we present an advanced method for precise modeling of highly aluminum-doped p+ silicon, leading to excellent agreement of numerical and experimental data within a broad range. We analyze the influence of different recombination mechanisms on the saturation current densities of Al-doped Si surfaces for different Al profiles. Lateral doping inhomogeneities and the effect of incomplete ionization have been examined in detail. We demonstrate that incomplete ionization affects the profile characteristics significantly and, therefore, has to be accounted for in accurate modeling of highly Al-doped silicon.
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