Abstract
The effect of incident angles on the morphology of silicon nanocone array induced by Ar + sputtering at room temperature has been investigated. The investigation of scanning electron microscopy indicates that with the increment of incident angle from 30°, 45°, 60° to 75°, the density of silicon nanocone increases from 1-2 × 10 8 cm -2 , 1-2 × 10 8 cm -2 , 6-7 × 10 8 cm -2 to 1-2 × 10 9 cm -2 , the apex angle of cone decreased from 70°, 55°, 36° to 27° and the aspect ratio of silicon nanocone decrease from 320/410 nm, 340/330 nm, 570/370 nm to 200/120 nm.
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