Abstract
In2O3 thin films were applied as underlayers for the growth of hexagonal InN and InGaN thin films on sapphire c-face substrates. Crystallinities of the nitride thin films grown with and without the In2O3 underlayer were compared, and the effect of the underlayer on these crystallinities was investigated. The application of (111)-faced heteroepitaxial In2O3 underlayers brought clear improvement effects on the crystallinities. In2O3 can be added to one of the promising underlayer materials for the hexagonal nitride thin film growth on the c-face sapphire substrate in addition to the typical nitride buffer layer materials, such as GaN and AlN.
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