Abstract
The anodized TiO2nanotube arrays (TNAs) have a benefit to provide large surfaces and straight electron transmitting routes to the electrode. However, it is difficult to fulfill with solid state electrolytes or photosensitive materials into the long TiO2nanotubes. The substrate of Ti/wave-like TiO2was prepared by peel-off the TNAs. The In2S3buffer layer between wave-like TiO2and CuInS2determines the photosensitivity of the Ti/wave-like TiO2/In2S3/CuInS2thin structure. The In2S3and CuInS2are well-crystallized at 300oC. The CuInS2phase forms in In2S3layer due to Cu diffusion independent on the slight loss of sulfur. The CuInS2direct deposition on Ti/wave-like TiO2substrate can not exhibit photosensitivity. When CuInS2deposited on In2S3to form Ti/wave-like TiO2/In2S3/CuInS2structure, the short-circuit current and the open-circuit voltage increase with the thickness increase of In2S3layer while illuminated by 50 mW/cm2white light.
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