Abstract
Temperature and intensity dependence of photoconductivity (σph) is studied in vacuum evaporated thin films of Se80Te20-xInx where x=0, 0.5 and 10 with a view to determining the effect of In impurity on the photoconductive behaviour of a binary amorphous Se80Te20 alloy. Temperature dependence of dark conductivity (σd) is also studied and it is observed that dark conductivity increases and activation energy decreases with the addition of In in binary Se80Te20 alloy. σph also increases upon In incorporation. However, photosensitivity (σph/σd) decreases with an increase in In concentration. The results are explained in terms of the increase in the defect density on In incorporation in the Se80Te20 binary system.
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