Abstract
AbstractThe temperature dependence of the thermal expansion coefficient for InSb has been determined in the range 25–515 °C by precision measurements of the lattice parameter of InSb single crystals. It is shown that beginning from 460 °C the temperature dependence of the lattice parameter for InSb single crystals grown from melts of different compositions is essentially affected by vacancies in the indium and antimony sublattices. The vacancy concentration and possible deviation of InSb from the stoichiometric composition are estimated from a relative decrease in the lattice parameter.
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