Abstract
Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.
Highlights
Silicon carbide (SiC), one of the oldest known semiconductor materials, has received special attention in recent years because of its suitability for electronic and optoelectronic devices operating under high temperature, high power, high frequency, and/or strong radiation conditions[1,2,3,4,5]
We investigate the effect of these impurities on Raman scattering at room temperature
There are a large number of SiC polytypes for which the stacking sequences of double atomic planes of Si-C along the c-direction are different
Summary
Silicon carbide (SiC), one of the oldest known semiconductor materials, has received special attention in recent years because of its suitability for electronic and optoelectronic devices operating under high temperature, high power, high frequency, and/or strong radiation conditions[1,2,3,4,5]. Nitrogen (N) or phosphorus (P) for n-type, aluminum (Al) or boron (B) for p-type and vanadium (V) for semi-insulating type, are often chosen for SiC doping These impurities-doped SiC crystals are widely applicable. In addition to other techniques, including atomic force microscopy (AFM) and scanning electron microscopy (SEM), Raman spectroscopy is becoming an increasingly common analysis method It offers fast and contact-free measurements with easy sample preparation. The Raman scattering on N-doped SiC has been reported in many papers[7,14,15,16,17] In this case, the significant changes could be observed in the shape and position of the A longitudinal optical (LO) phonon as a function of doping concentration.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
