Abstract
The effect of implanted O on gettering of Au at dislocations in Si has been studied. FZ Si(1 1 1) wafers, implanted with Au (1.5 MeV, 2.2 × 1 0 15 atoms cm −2), were annealed for 1 h at 850 ° C and subsequently implanted with MeV O or Si ions. The gettering behavior of the damage layers in Si has been studied as a function of annealing temperature and time using Rutherford backscattering spectrometry. The concentration of Au gettered in the O implanted layer has been found to increase with annealing time at 850 ° C whereas that in the Si implanted layer remained constant. A drastic reduction in the gettering efficiency of the O implanted layer has been observed for annealing temperatures higher than 850 ° C. Our results indicate that gettering of Au at dislocations in Si is strongly influenced by the presence of O atoms.
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