Effect of implantation temperature on exfoliation of H2+-implanted Si

Abstract

The effect of implantation temperature of crystalline silicon implanted with hydrogen on exfoliation was investigated. The samples were analyzed by Raman scattering spectroscopy, optical microscopy and transmission electron microscopy. Our experiment shows that the concentrations of implantation-induced defects and hydrogen decrease with the implantation temperature. Compared to the implantation at 573 K and 773 K, (100) platelets are preferentially nucleated when the sample was implanted at room temperature (RT), while {111} platelets are preferentially nucleated for the elevated temperature implantation. After annealing at 773 K, blisters and exfoliation occur for the sample implanted at RT but not the sample implanted at 573 K. Microstructure shows a microcrack in the damaged layer for the sample implanted at RT. After annealing at 973 K, blisters and exfoliation occur for the samples implanted at RT, 573 K and 773 K. The exfoliation mean size increases, but the exfoliation density decreases with the implantation temperature. Microstructure shows a microcrack in the damaged layer for the samples implanted at RT, 573 K and 773 K. The depth of the microcrack is related to the implantation temperature. The effects of implantation temperature on dislocation loops, platelet nucleation and growth were investigated.