Abstract
A systematic investigation of damage accumulation in GaN films induced by Ar+ as a function of implantation temperature and dose rate has been conducted. Depth distribution of disorder was measured by Rutherford Backscattering/Channeling spectrometry. Two disordered regions were identified in the damage depth distribution: a surface peak and a bulk damage peak. These regions exhibited different behavior as a function of implantation temperature. The displaced atomic density in the bulk damage peak displayed a “reverse annealing” behavior in temperature range from 500 °C to 700 °C, which we attributed to formation of characteristic secondary defects. The influence of implantation temperature and dose rate on the radiation damage accumulation is discussed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
