Abstract
The effects of implantation of Samarium ions (Sm+), a rare earth ion (RE) on the properties of ZnO films grown on Si (001) substrate by RF sputtering system are presented. The structural properties of the virgin and Sm–implanted ZnO thin films were investigated by Atomic force microscopy, Rutherford backscattering spectroscopy and Raman spectroscopy. Local lattice softening caused by the incorporation of highly mismatched Sm+ (ionic radii 0.096 nm and 0.113 nm for Sm3+ and Sm2+ respectively) into Zn antisites was detected as a red shift in E2 (high) mode likely caused by reduction in the crystallinity of the ZnO film. Photoluminescence on the pristine ZnO film showed a strong near band gap (NBE) emission and an intrinsic defect related blue, green-orange emission. The NBE is suppressed after implantation of Sm+ while the blue, green – orange emission intensities are enhanced as a result of increased structural defects with mismatched charge states. Moreover the effect of varying the concentration of Sm+ ions is presented and compared with predictions made from Stopping and Range of Ions in Matter (SRIM) calculation.
Highlights
Zinc oxide (ZnO) thin film has emerged as a promising candidate for transparent electronic device applications such as bottom electrode layer in solar cells, ultraviolet laser emission, photodetectors, piezoelectricity and biosensors.1 The widespread application has been prompted by its wide direct band gap (3.3 eV), a large exciton binding energy of ∼60 meV at room temperature.2–4 These excellent properties enable its application as a light-emitter due to its efficient excitonic emission at room temperature
The effects of implantation of Samarium ions (Sm+) on the properties of ZnO films grown on Si (001) substrate by RF sputtering system are presented
The structural properties of undoped and Sm- doped ZnO thin films were investigated by Atomic force microscopy, Scanning Electron microscopy and Raman scattering studies
Summary
Zinc oxide (ZnO) thin film has emerged as a promising candidate for transparent electronic device applications such as bottom electrode layer in solar cells, ultraviolet laser emission, photodetectors, piezoelectricity and biosensors. The widespread application has been prompted by its wide direct band gap (3.3 eV), a large exciton binding energy of ∼60 meV at room temperature. These excellent properties enable its application as a light-emitter due to its efficient excitonic emission at room temperature. Zinc oxide (ZnO) thin film has emerged as a promising candidate for transparent electronic device applications such as bottom electrode layer in solar cells, ultraviolet laser emission, photodetectors, piezoelectricity and biosensors.. The widespread application has been prompted by its wide direct band gap (3.3 eV), a large exciton binding energy of ∼60 meV at room temperature.. The widespread application has been prompted by its wide direct band gap (3.3 eV), a large exciton binding energy of ∼60 meV at room temperature.2–4 These excellent properties enable its application as a light-emitter due to its efficient excitonic emission at room temperature. Energy absorption occurs due to the interband transition by valence electrons to the conduction band. Recombination usually occurs close to or in the electronic defects.
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