Abstract

The sacroiliac joint can give rise to a syndrome of buttock and leg pain which is often difficult to differentiate from other causes of low--back pain. In some cases the syndrome may go unrecognized and may be a contributing factor in failed low-back surgery. The syndrome often occurs in the presence of lumbar spine disorders and may continue to cause pain after successful conservative or surgical treatment to the lumbar spine. The purpose of this paper is to review the anatomy, biomechanics, pathology, diagnosis and treatment of sacroiliac syndrome. Three case studies are presented to illustrate some of the main features of the syndrome, particularly in patients that have undergone previous spinal surgery.

Highlights

  • The detector of choice for the communication systems by optical fiber often based on an avalanche photodiode (APD) operating in the near infrared range, because its multiplication factor makes it possible to obtain overall sensitivity of the receiver [1]

  • The simulations will allow us to appreciate the behavior of our solar photodiode model based on CuInSe2 (CIS) of P+N type

  • We are interested on the impact of ionization and the noise excess factor in CuInSe2 (CIS) solar photodiodes of P+N type

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Summary

Introduction

The detector of choice for the communication systems by optical fiber often based on an avalanche photodiode (APD) operating in the near infrared range, because its multiplication factor makes it possible to obtain overall sensitivity of the receiver [1]. The ionization coefficients, the multiplication factor and the noise excess factor are determined in the carrier multiplication region. The ionization coefficients kn, for the electrons and kp for the holes, are highly dependent on the reverse electric field. The effect of the extension of the space charge zone on the photocurrent density generated in the absence of reverse polarization voltage J ph (V = 0) and on the multiplication factor has been demonstrated by V. The extension of the space charge zone, allows to multiplicate these photocarriers and causing the noise characterized by a noise excess factor F. We decided to adopt the same theoretical model and to carry out our simulations on solar photodiodes models based on CuInSe2 (CIS) of P+N type to verify the effect of impact ionization on noise in solar junctions and to improve their performance

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