Abstract

The effect of the illumination wavelength on the vertical parallel silicon solar cell n-p junction with electrical parameters by use extension space charge region method is theoretically analyzed. Based on the excess minority carrier’s density, the photocurrent density and photovoltage across the junction was determined. From both photocurrent and the photovoltage, the series and shunt resistance expressions are deduced and the solar cell associated capacitance (open-circuit and short-circuit) and conversion efficiency are calculated. Wavelength dependence in the initial part with moderate junction recombination velocity modulation by use extended space charge region method. This influence is attenuated in polycrystalline silicon solar cells with wavelength in the space charge region. A theoretical discussion about the wavelength dependence of the cell efficiency is also reported.

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