Abstract
In this work, the effects of light-generated carriers on the dielectric properties of the structure ITO/PEDOT: PSS/P3HT:PC70BM/Al were carried out. Impedance spectroscopy was performed at an applied bias equal to the open-circuit. From the real and imaginary part of the impedance, a dipolar relaxation type was observed, which decreased in the presence of light due to an increase in the electron mobility. The Cole–Cole diagram fit using a parallel model R-CPE equivalent circuit leads to the comparison of parallel resistances (Rp) and capacitance (CPE) in dark and under illumination. The decrease of Rp is related to the increases in the photo-generated charge carrier density. The increase in the capacitance is related to the enhancement of the P3HT/PCBM interface homogeneity.
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