Abstract
The effect of III/V ratio in the gas stream on the properties of grown by the vapor phase epitaxial (VPE) technique has been studied. At the substrate temperature of 840°C, the nitrogen distribution coefficient is found to increase strongly with increasing III/V ratio. Equilibrium thermodynamic calculations explain the dependence well. On the other hand, the residual doping level, believed to be due to S, has the opposite dependence on III/V ratio which is not understood. The minority carrier lifetime and diode efficacy are observed to increase with III/V ratio. An analysis of this behavior indicates the dominant nonradiative recombination center in this material may be a deep acceptor residing on the Ga sublattice, such as Cu or Fe.
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