Abstract

A series of self-assembled monolayers (SAMs), comprising octadecyltrichlorosilane (ODTS), dodecyltrichlorosilane (DDTS), and hexamethyldisilazane (HMDS), were prepared to examine the effects of phase states and condensation behaviors of SAMs on the morphologies and performance of pentacene-based organic field-effect transistors (OFETs) by means of Fourier Transform Infrared (FT-IR) spectrometer, atomic force microscope (AFM), X-ray diffraction (XRD), and semiconductor parameter analyzer. Experimental results reveal that the treatment of SiO2 substrates with O2 plasma (denoted as O2-SiO2) and the preparation temperature of SAMs dramatically influence the morphologies of SAMs and the performance of corresponding pentacene-based (no purification) OFETs. When the SAMs were prepared at 30°C, the OFET based on ODTS-treated O2-SiO2 substrate had the highest hole mobility, reaching as large as 1.15cm2V−1s−1, and an on/off current ratio in excess of 105; these values are both much larger than those of a device based on ODTS-modified SiO2 substrates without O2 plasma treatment and O2-SiO2 substrates modified by ODTS SAMs prepared at other temperatures. OFETs based on O2-SiO2 substrates that were modified by DDTS and HMDS SAMs prepared at 4°C performed best.

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