Abstract
The effects of hydrogen treatment on the concentration of donors and acceptors in Al0.5Ga0.5As0.05Sb0.95 are studied by capacitance-voltage measurements, two probe spreading resistance profiling, and secondary ion mass spectrometry (SIMS). Strong passivation of both donors and acceptors was observed. SIMS measurements of deuterium profiles in both and that of the donors or acceptors. This behavior is closer to that of the AlxGa1−xAs system than to that of GaSb.
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