Abstract
The effect of hydrogen on photoelectric properties and photoluminescence of Pd/GaAs/InGaAs diode structures with quantum wells (QWs) was investigated. The dependence of the structure characteristics on the thickness of the GaAs anodic oxide layer is revealed, and the optimum oxide thickness for the fabrication of hydrogen sensors is determined. It is established that the existence of metal bridges in a thin oxide layer has a significant influence on the I-V curves of the structures. It is shown that the presence of QWs leads to an increase in the structure’s sensitivity to hydrogen. Using the QWs as local defect probes, formation of the defects resulting from the deposition of a Pd electrode both on natural and on anodized GaAs surface is studied. It is found that defects in the QWs of the diode structures can be passivated by introduction of atomic hydrogen through the Pd electrode upon exposure of the structures to an atmosphere of molecular hydrogen.
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