Abstract
To reduce the resistive-capacitive (RC) delay, low-k materials are employed in advanced packaging systems that cover the redistribution layers (RDL). Owing to its remarkable properties, photosensitive polyimide (PSPI) is one of the most widely used interlayer dielectric (ILD) materials. Industries usually employ the forming gas annealing (FGA) (5 % H2 / 95 % N2 at 350 °C) in processes which help to reduce the dangling bonds at interfaces of Si/SiO2. Considering this, we have studied the effect of FGA onto photopatterned PSPI films and compared it with nitrogen gas annealing. The imidization in films at different ambientes is confirmed by Fourier Transform Infrared Spectroscopy (FTIR). X-ray photoelectron spectroscopy (XPS), and Elemental Dispersive Spectroscopy (EDS) implied to study the compositional change in PSPI after different ambient annealing. Our study reveals that FGA causes more imidization, but it forms impurities in PSPI leading to reduction in its mechanical strength and causes carbon from PSPI to diffuse inside copper interconnects. We hope the proposed research will help to understand the adverse effect of FGA annealing on the PSPI. Interestingly, N2 gas annealing is more feasible for PSPI than that of FGA 350 °C.
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