Abstract
This paper presents results of the investigation of hydrogen influence on the stability of low pressure chemical vapour deposition a-Si films. We measured boron- or phosphorus-doped films post-hydrogenated by ion implantation with different hydrogen doses. The dark conductivity after fast quenching and slow cooling and the isothermal relaxation were measured at different annealing temperatures. It was found that higher hydrogen concentration causes greater metastable changes but shorter relaxation time of defects.
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