Abstract
The gas composition is one of the most important parameters for reducing process temperature of the plasma enhanced chemical vapor deposition. We investigate the effect of the gas flow rate of SiH4, H2, and N2 on the quality and the deposition rate of the silicon nitride films (SiNx) formed by the microwave excited PECVD. The SiH4 flow rate is most important parameter for controlling the deposition rate and the film quality in the PECVD using N2, H2, SiH4 gasses. The deposition rate strongly depends on the SiH4 flow rate; however the film quality was degraded with the increase of the flow rate. The hydrogen has an optimum flow rate for the high deposition rate and high quality film formation. The hydrogen effectively dissociates the SiH4 gas and makes the nitridation species (NHx), as the result, the optimal hydrogen improves the reaction efficiency of SiH4 and NHx.
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